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1

Tilting of lattice planes in InP epilayers grown on miscut GaAs substrates: the effect of initial growth conditions

Ferenc Riesz, K. Lischka, K. Rakennus, T. Hakkarainen, A. Pesek

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 488 KB

english, 1991

2

A Ga0.51In0.49P/GaAs-based photovoltaic converter for two-directional optical power and data transmission

K. Vänttinen, J. Lammasniemi, K. Rakennus, H. Asonen, R. Jurva, P. Karioja

Journal:

Progress in Photovoltaics: Research and Applications

Year:

1995

Language:

english

File:

PDF, 379 KB

english, 1995

3

[IEEE Conference Digest. ISLC 1998 NARA. 1998 IEEE 16th International Semiconductor Laser Conference - Nara, Japan (4-8 Oct. 1998)] Conference Digest. ISLC 1998 NARA. 1998 IEEE 16th International Semiconductor Laser Conference (Cat. No. 98CH361130) - Tensile-strained single quantum well 808 nm lasers with Al-free active regions and InGaAlP cladding layers grown by solid source MBE

Nabiev, R.F., Aarik, J., Asonen, H., Bournes, P., Corvini, P., Fang, F., Finander, M., Jansen, M., Nappi, J., Rakennus, K., Salokatve, A.

Year:

1998

Language:

english

File:

PDF, 152 KB

english, 1998

4

Growth of InP, InGaAs, and InGaAsP on InP by gas-source molecular beam epitaxy

H. Asonen, K. Rakennus, K. Tappura, M. Hovinen, M. Pessa

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 396 KB

english, 1990

5

The substrate—epitaxial interface of GaAs and InP grown by GSMBE

K. Tappura, A. Salokatve, K. Rakennus, H. Asonen, M. Pessa

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 113 KB

english, 1991

6

Interface effects on electrical properties of high purity InP grown by gas-source molecular beam epitaxy

K. Rakennus, K. Tappura, T. Hakkarainen, H. Asonen, R. Laiho, S.J. Rolfe, J.J. Dubowski

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 398 KB

english, 1991

7

The influence of growth conditions on the composition of GaInAsP grown by gas-source molecular beam epitaxy

K. Tappura, T. Hakkarainen, K. Rakennus, M. Hovinen, H. Asonen

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 462 KB

english, 1991

8

Temperature dependency of the composition of GaInAsP grown by GSMBE

K. Tappura, T. Hakkarainen, K. Rakennus, H. Asonen

Journal:

Journal of Crystal Growth

Year:

1992

Language:

english

File:

PDF, 383 KB

english, 1992

9

Low dark current In0.53Ga0.47As/InP SAM avalanche photodiodes grown by gas-source MBE

G. Zhang, T. Hakkarainen, K. Rakennus, K. Tappura, H. Asonen, M. Pessa

Journal:

Journal of Crystal Growth

Year:

1992

Language:

english

File:

PDF, 398 KB

english, 1992

10

Optical properties of a ZnSSe microcavity fabricated by epitaxial lift-off

T. Aherne, A.L. Bradley, J.P. Doran, J. O'Gorman, J.F. Heffernan, J. Hegarty, H. De Neve, C. Brys, G. Geens, P. Van Daele, R. Baets, P. Demeester, K. Rakennus, A. Salokatve, P. Uusimaa, M. Pessa

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 221 KB

english, 1996

11

Growth of II–VI Bragg mirrors by molecular beam epitaxy

K. Rakennus, P. Uusimaa, J. Näppi, A. Salokatve, M. Pessa, T. Aherne, J.P. Doran, J. O'Gorman, J. Hegarty

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 277 KB

english, 1996

12

Structural studies on InP/GaAs heterostructures using multiple X-ray diffraction

SL Morelhão, LH Avanci, LP Cardoso, Ferenc Riesz, K Rakennus, T Hakkarainen

Journal:

Year:

1995

Language:

english

File:

PDF, 346 KB

english, 1995

13

Mapping of Bragg-surface diffraction of InP/GaAs(1 0 0) structure

L.H Avanci, M.A Hayashi, L.P Cardoso, S.L Morelhão, F Riesz, K Rakennus, T Hakkarainen

Journal:

Journal of Crystal Growth

Year:

1998

Language:

english

File:

PDF, 195 KB

english, 1998

14

Blue–green microcavity light emitting diode with monolithic MgZnSSe/ZnSSe Bragg reflectors

P Uusimaa, A Salokatve, K Rakennus, A Rinta-Möykky, M Pessa

Journal:

Materials Science and Engineering: B

Year:

1998

Language:

english

File:

PDF, 201 KB

english, 1998

15

Study of ZnSe-Based Layer Structures for Blue-Green Laser Diodes

M. Pessa, K. Rakennus, P. Uusimaa, P. Savolainen, A. Salokatve

Journal:

physica status solidi (b)

Year:

1995

Language:

english

File:

PDF, 568 KB

english, 1995

16

Effects of annealing on performance of InP solar cells on GaAs substrates

Jouko Lammasniemi, Keijo Rakennus

Journal:

Solar Energy Materials and Solar Cells

Year:

1993

Language:

english

File:

PDF, 312 KB

english, 1993

17

Stopping powers of GaAs for 0.3–2.5 MeV 1H and 4He ions

M. Rajatora, K. Väkeväinen, T. Ahlgren, E. Rauhala, J. Räisänen, K. Rakennus

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

1996

Language:

english

File:

PDF, 602 KB

english, 1996

18

Epitaxial lift‐off of ZnSe based II–VI structures

Brys, C., Vermaerke, F., Demeester, P., Van Daele, P., Rakennus, K., Salokatve, A., Uusimaa, P., Pessa, M., Bradley, A. L., Doran, J. P., OGorman, J., Hegarty, J.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 489 KB

english, 1995

19

[IEEE 28th IEEE Photovoltaic Specialists Conference - Anchorage, AK, USA (15-22 Sept. 2000)] Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036) - Advances in production MBE grown GaInP/GaAs cascade solar cells

Leinonen, P., Pessa, M., Haapamaa, J., Rakennus, K.

Year:

2000

Language:

english

File:

PDF, 319 KB

english, 2000

20

[IEEE Conference Proceedings. LEOS '97. 10th Annual Meeting IEEE Lasers and Electro-Optics Society 1997 Annual Meeting - San Francisco, CA, USA (10-13 Nov. 1997)] Conference Proceedings. LEOS '97. 10th Annual Meeting IEEE Lasers and Electro-Optics Society 1997 Annual Meeting - High-power reliable aluminum-free lasers

Pessa, M., Savolainen, P., Toivonen, M., Jalonen, M., Salokatve, A., Aarik, J., Ovtchinnikov, A., Rakennus, K., Murison, R., Jansen, M., Nabiev, R., Fang, F.

Year:

1996

Language:

english

File:

PDF, 116 KB

english, 1996

21

[IEEE CLEO 2001. Technical Digest. Summaries of papers presented at the Conference on Lasers and Electro-Optics. Postconference Technical Digest - Baltimore, MD, USA (2001.5.11-2001.5.11)] Technical Digest. Summaries of papers presented at the Conference on Lasers and Electro-Optics. Postconference Technical Digest (IEEE Cat. No.01CH37170) - Reliable 20W CW operation of 880 nm laser arrays with aluminum-free active regions

Liu, G.T., Finander, M.J., Corvini, P.J., Salokatve, A., Rakennus, K., Kuuslahti, T., Kongas, J.

Year:

2001

Language:

english

File:

PDF, 274 KB

english, 2001

22

[IEEE Third International Conference Indium Phosphide and Related Materials - Cardiff, UK (8-11 April 1991)] [Proceedings 1991] Third International Conference Indium Phosphide and Related Materials - Growth of Be-doped InP by gas-source molecular beam epitaxy

Hakkarainen, T., Rakennus, K., Hovinen, M., Pessa, M., Asonen, H.

Year:

1991

Language:

english

File:

PDF, 292 KB

english, 1991

23

[IEEE Record of the Twenty Third IEEE Photovoltaic Specialists Conference - 1993 (Cat. No.93CH3283-9) - Louisville, KY, USA (10-14 May 1993)] Conference Record of the Twenty Third IEEE Photovoltaic Specialists Conference - 1993 (Cat. No.93CH3283-9) - Characteristics of indium phosphide solar cells bonded on silicon

Lammasniemi, J., Rakennus, K., Asonen, H., Pessa, M.

Year:

1993

Language:

english

File:

PDF, 335 KB

english, 1993

24

Depth profiles of defects in CdTe(100) overlayers grown by molecular beam epitaxy on GaAs(100)

Rauhala, E., Keinonen, J., Rakennus, K., Pessa, M.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 408 KB

english, 1987

25

Molecular beam epitaxy growth of MgZnSSe/ZnSSe Bragg mirrors controlled by in situ optical reflectometry

Uusimaa, P., Rakennus, K., Salokatve, A., Pessa, M., Aherne, T., Doran, J. P., O’Gorman, J., Hegarty, J.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 320 KB

english, 1995

26

Comparative study of the substrate-film interfaces of GaAs grown by two molecular beam epitaxial methods

Tappura, K., Salokatve, A., Rakennus, K., Asonen, H., Pessa, M.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 509 KB

english, 1990

27

Model of growth of single-domain GaAs layers on double-domain Si substrates by molecular beam epitaxy

Varrio, J., Asonen, H., Lammasniemi, J., Rakennus, K., Pessa, M.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 651 KB

english, 1989

28

[IEEE Third International Conference Indium Phosphide and Related Materials - Cardiff, UK (8-11 April 1991)] [Proceedings 1991] Third International Conference Indium Phosphide and Related Materials - InP homojunction solar cells grown by gas-source molecular beam epitaxy

Zibin, J.P., Rakennus, K., Tappura, K., Zhang, G., Lammasniemi, J., Asonen, H.

Year:

1991

Language:

english

File:

PDF, 367 KB

english, 1991

29

by Positron Annihilation

Saarinen, K., Laine, T., Skog, K., Mäkinen, J., Hautojärvi, P., Rakennus, K., Uusimaa, P., Salokatve, A., Pessa, M.

Journal:

Physical Review Letters

Year:

1996

Language:

english

File:

PDF, 122 KB

english, 1996

30

[IEEE LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - Newport, RI, USA (21-24 April 1992)] LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - Morphological defects in InP layers grown by gas-source molecular beam epitaxy

Rakennus, K., Hakkarainen, T., Tappura, K., Asonen, H., Pessa, M.

Year:

1992

File:

PDF, 385 KB

1992

31

[IEEE Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996 - Washington, DC, USA (1996.05.13-1996.05.17)] Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996 - Molecular beam epitaxy grown GaInP top cells and GaAs tunnel diodes for tandem applications

Lammasniemi, J., Tappura, K., Jaakkola, R., Kazantsev, A., Rakennus, K., Uusimaa, P., Pessa, M.

Year:

1996

Language:

english

File:

PDF, 376 KB

english, 1996

32

Growth and characterization of an epitaxially grown ZnSSe/MnZnSSe distributed Bragg reflector

Salokatve, A., Rakennus, K., Uusimaa, P., Pessa, M., Aherne, T., Doran, J. P., O’Gorman, J., Hegarty, J.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 340 KB

english, 1995

33

An atomic force microscopy study of the surface morphology of InP/GaAs heteroepitaxial layers subjected to rapid thermal annealing

Riesz, Ferenc, Vignali, C., Pelosi, C., Rakennus, K., Hakkarainen, T.

Journal:

Journal of Applied Physics

Year:

1998

Language:

english

File:

PDF, 487 KB

english, 1998

34

[IEEE 1993 (5th) International Conference on Indium Phosphide and Related Materials - Paris, France (19-22 April 1993)] 1993 (5th) International Conference on Indium Phosphide and Related Materials - Impurity related interface effects in GSMBE grown InP

Rakennus, K., Likonen, J., Nappi, J., Tappura, K., Asonen, H., Pessa, M.

Year:

1993

Language:

english

File:

PDF, 280 KB

english, 1993

35

[IEEE 1993 (5th) International Conference on Indium Phosphide and Related Materials - Paris, France (19-22 April 1993)] 1993 (5th) International Conference on Indium Phosphide and Related Materials - Bonding of indium phosphide layers on silicon substrates

Lammasniemi, J., Jalonen, M., Rakennus, K., Asonen, H., Pessa, M.

Year:

1993

Language:

english

File:

PDF, 288 KB

english, 1993

36

Growth and Doping of II-VI Materials for Blue/Green Lasers

Rakennus, K., Uusimaa, P., Likonen, J., Savolainen, P., Pessa, M.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 298 KB

1995

37

The Effect of Initial Growth Conditions on the Tilting of Lattice Planes in InP-ON-GaAs Heterostructures

Riesz, Ferenc, Lischka, K., Rakennus, K., Hakkarainen, T., Pesek, A., Koppensteiner, E.

Journal:

MRS Proceedings

Year:

1991

Language:

english

File:

PDF, 351 KB

english, 1991

38

The Effect of The Initial Nucleation Temperature on The Misfit Dislocation Structure of InP-on-GaAs Heterostructures

Riesz, Ferenc, Radnoczi, G., Pecz, B., Rakennus, K., Hakkarainen, T., Pesek, A., Lischka, K.

Journal:

MRS Proceedings

Year:

1992

Language:

english

File:

PDF, 2.28 MB

english, 1992

39

Identification Of The Native Vacancy Defects In ZnSxSe1−x And MgyZn1−y SxSe1−x by Positron Annihilation

Saarinen, K., Laine, T., Skog, K., Oila, J., Hautojärvi, P., Rakennus, K., Uusimaa, P., Salokatve, A., Pessa, M.

Journal:

MRS Proceedings

Year:

1996

Language:

english

File:

PDF, 468 KB

english, 1996

40

SPIE Proceedings [SPIE Physical Concepts of Materials for Novel Optoelectronic Device Applications - Aachen, Federal Republic of Germany (Sunday 28 October 1990)] Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization - Current state of gas-source molecular beam epitaxy for growth of optoelectronic materials

Pessa, Markus, Hakkarainen, T., Keskinen, Jari, Rakennus, Keijo, Salokatve, Arto K., Zhang, Guodong, Asonen, Harry M., Razeghi, Manijeh

Year:

1991

Language:

english

File:

PDF, 485 KB

english, 1991

41

Development of materials for blue/green light emitters

Rakennus, K, Uusimaa, P, Smekalin, K, Savolainen, P, Pessa, M

Journal:

Physica Scripta

Year:

1994

Language:

english

File:

PDF, 411 KB

english, 1994

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